WEP is a strong research oriented organization from the black forest area of Germany. Due to their precision engineering, they have the best technology for Electrochemical Capacitance Voltage Profiling.

Wafer Profiler CVP 21

The Wafer Profiler CVP21 is a handy tool to measure doping profiles in semiconductor layers by Electrochemical Capacitance Voltage Profiling (ECV-Profiling, CV-Profiling) in semiconductor research or production. This ECV Profiler (CV-Profiler, C-V-Profiler) furthermore is a very good choice to analyze or develop strategies for Photo-Electrochemical Wet Etching (PEC-Etching) of semiconductors.

CVP21 supports the COMPLETE spectrum of materials:

  • Group IV semiconductors as Silicon (Si), Germanium (Ge), Silicon Carbide (SiC)
  • III-V semiconductors as Gallium Arsenide (GaAs), Indium Phosphide (InP), Gallium Phosphide (GaP)
  • ternary III-V alloys as Aluminum Gallium Arsenide (AlGaAs), Gallium Indium Phosphide (GaInP), Aluminium Indium Arsenide (AlInAs)
  • quaternary III-V alloys as Aluminum Gallium Indium Phosphide (AlGaInP)
  • Nitrides, as Gallium Nitride (GaN), Aluminum Gallium Nitride (AlGaN), Indium Gallium Nitride (InGaN) or Aluminum Indium Nitride (AlInN)
  • II-VI semiconductors as Zinc Oxide (ZnO), Cadmium Telluride (CdTe), Mercury Cadmium Telluride (HgCdTe, MCT)
  • less commonly used semiconductors (please contact us for sample measurements)


  • Sample size: 4*2 mm2 to complete 8" wafer size are standard (smaller samples on request)
  • Concentration resolution < 1012 cm-3 to > 1021 cm-3 (*)
  • Depth resolution 1 nm to 100 îm (*)

Advantages of ECV Profiling

Application requirement Hall SIMS SRP ECV
Monitor the doping concentration
Monitor the concentration of electrically activated dopants
Monitor the doping type (n or p)
Monitor the crystalline quality of the sample
Easy sample preparation
Easy equipment preparation (no calibration or standard samples required)
Easy contact preparation
Substrate may be conductive
Thickness of the epi layer may be unknown
Depth Profile may be measured
Depth resolution in the 1nm range possible
Several layers may be resolved
A broad range of semiconductors may be measured
Concentrations below 1014 cm-3 may be measured *)
Wafer topography may be analyzed
Measurement without prior mechanical or lithographic preprocessing
Photo-Electro-Chemical (PEC) etching may be evaluated
The surface may be etched/ passivated on start of the measurement